A high-voltage semiconductor rectangular-pulse generator for powering a barrier discharge
- 作者: Malashin M.V.1, Moshkunov S.I.1, Khomich V.Y.1, Shershunova E.A.1
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隶属关系:
- Institute for Electrophysics and Electric Power
- 期: 卷 59, 编号 2 (2016)
- 页面: 226-230
- 栏目: Electronics and Radio Engineering
- URL: https://ogarev-online.ru/0020-4412/article/view/158943
- DOI: https://doi.org/10.1134/S0020441216020093
- ID: 158943
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详细
A semiconductor rectangular-pulse generator with smoothly controlled output parameters for powering a barrier discharge was developed and investigated. The generator allows the formation of voltage pulses with the smoothly regulated amplitude (0–16 kV) and duration (600 ns–1 ms) across the discharge gap. The pulse rise and fall times can be varied from 40 ns to 1 μs. The generator pulse repetition rate can be smoothly varied from 0 to 50 kHz. The generator can operate in the manual-triggering mode and in the mode of pulse trains with an effective frequency of up to 500 kHz. The generator is intended for initiating and investigating a barrier discharge in millimeter-wide air gaps at the atmospheric pressure.
作者简介
M. Malashin
Institute for Electrophysics and Electric Power
编辑信件的主要联系方式.
Email: m_malashin@mail.ru
俄罗斯联邦, Dvortsovaya nab. 18, St. Petersburg, 191186
S. Moshkunov
Institute for Electrophysics and Electric Power
Email: m_malashin@mail.ru
俄罗斯联邦, Dvortsovaya nab. 18, St. Petersburg, 191186
V. Khomich
Institute for Electrophysics and Electric Power
Email: m_malashin@mail.ru
俄罗斯联邦, Dvortsovaya nab. 18, St. Petersburg, 191186
E. Shershunova
Institute for Electrophysics and Electric Power
Email: m_malashin@mail.ru
俄罗斯联邦, Dvortsovaya nab. 18, St. Petersburg, 191186
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