Excitation of high-intensity laser radiation of semiconductor targets by a subnanosecond electron beam

Аннотация

The results of the excitation of СdS semiconductor targets by a subnanosecond electron beam (EB) with an electron energy of 60–230 keV are presented. The maximum intensity of laser radiation from targets for a 1-mm EB diameter exceeded 10⁷ W/cm² at an efficiency of ~10%. Lasing was initiated at the leading edge of the EB current; laser radiation then reproduced the shape of the excitation pulse. At low excitation levels, a single-mode lasing regime with the wavelength λ = 522 nm was observed. The maximum power of laser radiation (10 MW) was achieved on a multielement CdS semiconductor target. The duration of laser pulses changed in the range of 100–500 ps.