Enviar artigo por via de e-mail Transient processes in high-voltage switches based on series-connected insulated-gap bipolar transistors
- Autores: Malashin M.V.1, Moshkunov S.I.1, Khomich V.Y.1
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Afiliações:
- Institute for Electrophysics and Electric Power
- Edição: Volume 59, Nº 2 (2016)
- Páginas: 222-225
- Seção: Electronics and Radio Engineering
- URL: https://ogarev-online.ru/0020-4412/article/view/158941
- DOI: https://doi.org/10.1134/S0020441216020081
- ID: 158941
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Resumo
The results of experimental studies of the process of switching a composite semiconductor switch, which consists of series-connected insulated-gate bipolar transistors with artificially nonuniformly distributed operating parameters are presented.
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Sobre autores
M. Malashin
Institute for Electrophysics and Electric Power
Autor responsável pela correspondência
Email: m_malashin@mail.ru
Rússia, Dvortsovaya nab. 18, St. Petersburg, 191186
S. Moshkunov
Institute for Electrophysics and Electric Power
Email: m_malashin@mail.ru
Rússia, Dvortsovaya nab. 18, St. Petersburg, 191186
V. Khomich
Institute for Electrophysics and Electric Power
Email: m_malashin@mail.ru
Rússia, Dvortsovaya nab. 18, St. Petersburg, 191186
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