Methodological and instrumental problems in high-precision in situ ellipsometry diagnostics of the mercury cadmium telluride layer composition in molecular beam epitaxy


Дәйексөз келтіру

Толық мәтін

Ашық рұқсат Ашық рұқсат
Рұқсат жабық Рұқсат берілді
Рұқсат жабық Тек жазылушылар үшін

Аннотация

Problems of high-precision in situ ellipsometry diagnostics of the composition of a mercury cadmium telluride (MCT) solid solution in the process of its growth using the molecular beam epitaxy are considered. The required precision was estimated for ellipsometry measurements aimed at determining the MCT composition with a permissible dispersion of ±0.003 mole fraction of CdTe. It has been revealed that for ellipsometers based on the static photometric scheme the instability of measurements is mainly caused by a random change in the directivity of the laser radiation. In combination with polarization nonuniformity over the area of the optical-section elements, this results in continuous drift of measured ellipsometric parameters. Based on these investigations, a high-stability laser ellipsometer has been designed. When used to monitor the in situ MCT layer growth by the molecular beam epitaxy, it allowed a decrease in the dispersion of the MCT composition by an order of magnitude from experiment to experiment and its precision to be maintained at a level of ±0.003 mole fractions of CdTe.

Авторлар туралы

V. Shvets

Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University

Хат алмасуға жауапты Автор.
Email: shvets@isp.nsc.ru
Ресей, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090; ul. Pirogova 2, Novosibirsk, 630090

I. Azarov

Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University

Email: shvets@isp.nsc.ru
Ресей, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090; ul. Pirogova 2, Novosibirsk, 630090

E. Spesivtsev

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: shvets@isp.nsc.ru
Ресей, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090

S. Rykhlitskii

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: shvets@isp.nsc.ru
Ресей, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090

M. Yakushev

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: shvets@isp.nsc.ru
Ресей, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090

D. Marin

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: shvets@isp.nsc.ru
Ресей, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090

N. Mikhailov

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: shvets@isp.nsc.ru
Ресей, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090

V. Kuzmin

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: shvets@isp.nsc.ru
Ресей, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090

V. Remesnik

Rzhanov Institute of Semiconductor Physics, Siberian Branch

Email: shvets@isp.nsc.ru
Ресей, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090

S. Dvoretsky

Rzhanov Institute of Semiconductor Physics, Siberian Branch; Tomsk State University

Email: shvets@isp.nsc.ru
Ресей, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090; pr. Lenina 36, Tomsk, 634050

Қосымша файлдар

Қосымша файлдар
Әрекет
1. JATS XML

© Pleiades Publishing, Inc., 2016