Measuring electrical parameters of semiconducting crystallites using Hall and Van der Pau methods in the slow-temperature-drift mode

Abstract

A method for measuring the Hall effect in the slow-temperature-drift mode is described. The proposed technique allows measurements of the electrical characteristics of semiconductor materials in a wide temperature range without the necessity to stabilize the sample temperature. This allows one to significantly increase the number of measured points during the experiment in comparison with conventional methods, thus increasing the accuracy of experimental data. The calculation results that were obtained using the electric-neutrality equation on the basis of the experimental data, which were acquired with this method, are in good agreement with those of other authors.